Etching studies on crystals of thallium arsenic selenide
- 1 October 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (1) , 43-50
- https://doi.org/10.1016/0022-0248(86)90499-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- An analysis of dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of 〈111〉 InPJournal of Applied Physics, 1985
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Influence of thermal conductivity on interface shape during bridgman growthJournal of Crystal Growth, 1983
- Computational studies on the convection caused by crystal rotation in a crucibleJournal of Crystal Growth, 1980
- The temperature dependence of optical and mechanical properties of Tl3AsSe3Journal of Applied Physics, 1980
- Optical imaging of growth defects in infrared crystalsJournal of Crystal Growth, 1980
- Acousto-optic properties of some chalcogenide crystalsJournal of Applied Physics, 1974
- Crystal structure of Tl3AsSe3Materials Research Bulletin, 1974
- Optoacoustic properties of thallium arsenic sulphide, Tl3AsS4Applied Physics Letters, 1972