On the Preferential Etching of GaAs by H 2 SO 4 ‐ H 2 O 2 ‐ H 2 O

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Abstract
The preferential etching of gallium arsenide in has been studied. A mechanism for the etching process is discussed drawing on observation by optical and scanning electron microscopy, published results on U H V surface analysis, and surface state models. The etch rates of the revealed planes are related to surface step densities, and the exposure of “equilibrium” step density surfaces is related to the surface migration lengths of probable reactant species.

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