6190-Å emission at 77 K of Ga1−xAlxAs double heterostructure lasers
- 1 February 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (3) , 127-129
- https://doi.org/10.1063/1.1655121
Abstract
The Ga1−xAlxAs laser diodes which emit a wavelength of 6190 Å at 77 K with threshold current densities as low as 300 A/cm2 were fabricated using a double heterostructure with lightly doped active regions. This lasing wavelength is the shortest ever attained in Ga1−xAlxAs lasers for such a low threshold current density. The maximum external quantum efficiency of these diodes was found to be about 35% at 77 K. The extensive studies made of the properties of these visible‐light‐emitting lasers, especially of the spectral distributions, are described in full detail.Keywords
This publication has 3 references indexed in Scilit:
- Spontaneous and stimulated recombination in p+-n-n+(AlGa)As-GaAs heterojunction laser diodesIEEE Journal of Quantum Electronics, 1973
- Low-threshold alxGa1-xAs visible and IR-light-emitting diode lasersIEEE Journal of Quantum Electronics, 1970
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969