GUNN EFFECT IN n-TYPE InSb
- 15 October 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (8) , 242-245
- https://doi.org/10.1063/1.1652985
Abstract
In this letter we report the observation of the Gunn effect in n‐type InSb at 77°K and atmospheric pressure. This result is surprising, since it was previously thought that the large amount of carrier multiplication at fields below the Gunn threshold would preclude observation of the Gunn effect in InSb and similar materials. Several explanations for the negative differential conductivity underlying the Gunn effect in this case are possible, but the intervalley transfer mechanism is most consistent with the observed negative pressure coefficient of the threshold field.Keywords
This publication has 9 references indexed in Scilit:
- Effects of Nonparabolicity on Non-Ohmic Transport in InSb and InAsPhysical Review B, 1968
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- The Gunn effectReports on Progress in Physics, 1967
- Hot Electron Polar Scattering in InSbPhysica Status Solidi (b), 1967
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- Transferred Electron Amplifiers and OscillatorsProceedings of the IRE, 1962
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957