Hot-electron flow in an inhomogeneous field

11 January 1988

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 52 (2) , 141-143
https://doi.org/10.1063/1.99031

Abstract

The drift velocity for hot electrons is expected to depend on the gradient of an inhomogeneous field, d F/d x, through a term proportional to a phenomenological length constant. Estimates suggest that the field gradient effect can be significant in short channel devices. Monte Carlo calculations of this length coefficient have been made, and numerical results are presented for electrons in silicon.

Keywords

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