Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 162-164
- https://doi.org/10.1063/1.100353
Abstract
Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range −50 to +50 °C.Keywords
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