Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1105-1108
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1105

Abstract

Keywords

• (11-20) FACE
• ANISOTROPY
• ELECTRON TRAP
• INVERSION CHANNEL MOBILITY
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• SCATTERING MECHANISMS
• THRESHOLD VOLTAGE