Time dependence of the shift of the energy of peak emission in GaAs junction lasers operated with a flat-topped current pulse at 77°K
- 1 June 1971
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 30 (6) , 589-593
- https://doi.org/10.1080/00207217108900363
Abstract
The shift of the energy of peak emission resulting from rise of the junction temperature in GaAs junction lasers during operation with a flat-topped current pulse is studied theoretically as a. function of time. The nature of this dependence is found to be in qualitative agreement with the experimental observation of such a dependence in GaAs 1-x P x junction losers as reported elsewhere. The effects of increasing doping and increasing amplitude of the current pulse on the time dependence of the energy shift are also studied. In addition expressions are derived for the maximum time duration of the output light pulse that can be obtained under the limitations of junction heating and the maximum possible shift in the energy of peak emission that may occur as a consequence of such heating.Keywords
This publication has 3 references indexed in Scilit:
- Transient temperature distribution in diode lasers and the time duration of the output pulse at 300°KIEEE Journal of Quantum Electronics, 1968
- The thermal properties of gallium arsenide laser structuresIEEE Journal of Quantum Electronics, 1968
- Temperature Effects in Coherent GaAs DiodesJournal of Applied Physics, 1963