Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

Publisher Website

19 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1995.520844

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films
Chemistry of Materials, 1993
Interdiffusions in Cu/reactive-ion-sputtered TiN, Cu/chemical-vapor-deposited TiN, Cu/TaN, and TaN/Cu/TaN thin-film structures: Low temperature diffusion analyses
Journal of Applied Physics, 1992
Stoichiometry of Ta–N Film and Its Application for Diffusion Barrier in the Al₃Ta/Ta–N/Si Contact System
Japanese Journal of Applied Physics, 1990
Properties and microelectronic applications of thin films of refractory metal nitrides
Journal of Vacuum Science & Technology A, 1985