Impurity Concentration Broadening of Acceptor Lines in Indium-Doped Silicon
- 1 August 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 46 (2) , 723-727
- https://doi.org/10.1002/pssb.2220460230
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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- The Reflection and Transmission of Infrared Materials: I, Spectra from 2 50 MicronsApplied Optics, 1963
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955