Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A) , L1871
- https://doi.org/10.1143/jjap.28.l1871
Abstract
Electrical characteristics of n-channel fine-grain polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated from a sputter-deposited Si film irradiated with laser light have been measured. The fine-grain poly-Si TFTs have attained a high mobility of 383 cm2/V·s despite a small grain size from 40 nm to several hundred nanometers. The high-mobility fine-grain poly-Si TFTs feature decreases in mobility with gate voltage and decreases in drain current with temperature in a manner similar to single-crystal MOSFETs. They also show a low carrier trap state density N st at grain boundaries of 5.6×1011 cm-2. High mobility in the poly-Si TFTs is due to a low N st.Keywords
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