Free-exciton radiation from p-i-n diodes of GaP doped with indium and oxygen
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3) , 129-130
- https://doi.org/10.1063/1.88687
Abstract
GaP diodes containing indium and oxygen emitted intense green light (2.23 eV) with weak red light (1.77 eV) at room temperature. The green light emission was enhanced by In and the spectral measurements revealed the green light to be due to the simultaneous annihilation of a free exciton and a LA phonon. The diode had a p‐i‐n structure, and the green light was emitted from the intrinsic region which was formed by oxygen deep donors. At appropriate oxygen concentrations, diodes which emit only green light were fabricated successfully.Keywords
This publication has 2 references indexed in Scilit:
- Intrinsic and extrinsic edge luminescence in epitaxial GaPJournal of Physics C: Solid State Physics, 1968
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961