Trapping of High Field Domain in n-Type GaAs
- 1 April 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (4) , 263-268
- https://doi.org/10.1143/jjap.5.263
Abstract
High field current-voltage characteristics ofn-typeGaAswere investigated in the temperature range of 200∼300°K with long samples, and below room temperature remarkable current saturation is found before the current oscillation begins. The critical field for current saturation was nearly the same as that for the Gunn effect at room temperature. The field distribution was observed with a traveling probe, and the formation of stationary high field domain was detected in the current saturation region. A mechanism is proposed to explain the trapping of the high field domain which results in the current saturation and hysteresis effect observed in this experiment.Keywords
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