First principles study of vacancies in Si

This publication has 29 references indexed in Scilit:

• Vacancy in Si: Successful description within the local-density approximation
  Physical Review Letters, 1992
• Green’s-matrix calculation of total energies of point defects in silicon
  Physical Review B, 1992
• Structure of hydrogenated amorphous silicon fromabinitiomolecular dynamics
  Physical Review B, 1991
• Tight-binding molecular-dynamics study of defects in silicon
  Physical Review Letters, 1991
• Breathing-mode lattice relaxation associated with the vacancy and phosphorus-vacancy-pair (E-center) defect in silicon
  Physical Review B, 1988
• Unified Approach for Molecular Dynamics and Density-Functional Theory
  Physical Review Letters, 1985
• Symmetric lattice distortions around deep-level impurities in semiconductors: Vacancy and substitutional Cu in silicon
  Physical Review B, 1983
• Self-interaction correction to density-functional approximations for many-electron systems
  Physical Review B, 1981
• Ground State of the Electron Gas by a Stochastic Method
  Physical Review Letters, 1980
• Model for the Electronic Structure of Amorphous Semiconductors
  Physical Review Letters, 1975