On the Electrical Properties of Porous Semiconductors
- 1 October 1952
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 23 (10) , 1122-1129
- https://doi.org/10.1063/1.1701995
Abstract
It has been proposed that the conductivity of a porous semiconductor, such as oxide‐coated cathode, may be influenced by the presence of an electron gas in the pores of the aggregate. In this paper calculations for the magnitude of this component of the conductivity are made on the basis of two simplified models approximating the geometry of a pore. The conditions under which such a component of the conductivity can appreciably modify the total conductivity are analyzed. It is further shown that such a porous semiconductor will possess two sources of thermoelectric emf. A simple theory for the thermoelectric power of the electron gas in a pore is developed, and the manner in which it will combine with the normal thermoelectric power of the crystals is shown.This publication has 4 references indexed in Scilit:
- Electrical Conductivity and Thermoelectric Power of (BaSr)O and BaOJournal of Applied Physics, 1952
- Semi-Conducting Properties in Oxide CathodesJournal of Applied Physics, 1949
- Oxide Coated Cathode Literature, 1940–1945Journal of Applied Physics, 1946
- The Properties of Oxide-Coated Cathodes. IJournal of Applied Physics, 1939