Surface topography changes during the growth of GaAs by molecular beam epitaxy
- 16 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25) , 3282-3284
- https://doi.org/10.1063/1.105706
Abstract
Changes in surface roughness taking place during (001) GaAs molecular beam epitaxy growth have been studied in situ using laser light scattering and ex situ using atomic force microscopy (AFM). Substantial increases in light scattering are found to occur firstly during oxide thermal desorption, associated with surface pit formation, and secondly during continued layer growth, due to the buildup of atomic step arrays. Monolayer height GaAs steps are readily resolved using AFM in air.Keywords
This publication has 13 references indexed in Scilit:
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffractionJournal of Crystal Growth, 1990
- In Situ Laser Light Scattering: II . Relationship to Silicon Surface TopographyJournal of the Electrochemical Society, 1989
- I n s i t u observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopyApplied Physics Letters, 1989
- Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron DiffractionJapanese Journal of Applied Physics, 1988
- In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBEJournal of Crystal Growth, 1987
- In situ characterization of MOCVD growth processes by light scattering techniquesJournal of Crystal Growth, 1986
- Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED OscillationsJapanese Journal of Applied Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984