Investigation of the gap state distribution in a-Si:H using post-transit pulse analysis
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 259-261
- https://doi.org/10.1016/0022-3093(89)90130-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Disorder effects on deep trapping in amorphous semiconductorsPhilosophical Magazine Part B, 1984