Monolithic integration of InAs photodiode and GaAs MESFET

13 February 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (4) , 372-374
https://doi.org/10.1049/el:19920233

Abstract

InAs pn diodes were grown in wells pre-etched in GaAs substrates. Despite the large lattice mismatch of 7.2% between GaAs and InAs, good photodiode characteristics were obtained with 77K resistance area products of 70Ωcm² and a peak detectivity of 1.25 × 10,¹¹cm√(Hz)/W at 2.95μm wavelength. GaAs MESFETs were fabricated next to the embedded detectors, demonstrating for the first time the feasibility of the monolithic integration of InAs photodiodes and GaAs electronic circuits.

Keywords

PEAK DETECTIVITY
INAS-GAAS
MONOLITHIC INTEGRATION
MESFETS
2.95 MICRON
LATTICE MISMATCH
EMBEDDED DETECTORS
PHOTODIODE CHARACTERISTICS
RESISTANCE AREA PRODUCTS

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