Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon
- 16 February 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (7) , 803-805
- https://doi.org/10.1063/1.120898
Abstract
No abstract availableKeywords
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