Effect of Diffusion on the Saturation Curve of a Plane Parallel Ion Chamber

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Abstract
Equations which include diffusion effects are derived for the electric field in an irradiated ion chamber. Numerical solutions are obtained by machine computer for degrees of saturation from 0.2 to 0.93. These solutions enable calculations to be made which agree closely with the experimental results of Shevyrev. An analytical expression is derived for the degree of saturation when recombination and space charge are negligible. The formula of Rossi and Staub may be interpreted as a limiting case of this expression.

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