Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates

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Abstract
Variations in energy gap, band structure, and relative dielectric constants were examined in 18 ternary and 15 quaternary III-V mixed semiconductor materials for optical devices. A semiconductor laser constructed with AlGaSb/AlGaAsSb on GaSb emitting a wavelength in the range from 1.3 to 1.7 µm is described. Uniform layers of mixed semiconductors, AlGaSb and AlGaAsSb, were successfully grown on a (111)B-oriented GaSb substrate. Lasing oscillation near 1.2 µm was observed at 77 K, slightly beyond 4.0 kA/cm2, in a hetero-isolation stripe laser with an active layer 1.6 µm thick.

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