Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN
- 1 January 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 196 (1) , 41-46
- https://doi.org/10.1016/s0022-0248(98)00818-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1998
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratioJournal of Electronic Materials, 1997
- Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxyPhysical Review B, 1995
- Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen sourceJournal of Crystal Growth, 1994
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986