Non-Volatile Memory Behaviour of Metal - Ferroelectric (BaTiO3Film) - Semiconductor (Si) - MFS Devices
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 576-579
- https://doi.org/10.1109/isaf.1986.201209
Abstract
No abstract availableKeywords
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