Charge-transfer spectrum and its temperature dependence in
- 17 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (7) , 1109-1112
- https://doi.org/10.1103/physrevlett.69.1109
Abstract
The reflectivity and its temperature dependence in the neighborhood of the charge-transfer band is reported for carrier-free . There is a sharp peak in the imaginary part of the dielectric function for light polarized parallel to the layers. It is shown that the line shape as well as its temperature dependence is consistent with short-range electron-hole interaction in the final state of the charge-transfer excitation broadened by moderate coupling to optical phonons.
Keywords
This publication has 16 references indexed in Scilit:
- Optical spectra of : Effect of carrier doping on the electronic structure of the planePhysical Review B, 1991
- Frequency and magnetic-field dependence of the dielectric constant and conductivity ofPhysical Review B, 1991
- Determination of the energy gap for charged excitations in insulatingPhysical Review B, 1990
- Optical studies of gap, exchange, and hopping energies in the insulating cupratesPhysical Review B, 1990
- Extensive study of the optical spectra for high-temperature superconducting oxides and their related materials from the infrared to the vacuum-ultraviolet energy regionJournal of the Optical Society of America B, 1989
- Mechanism for high-temperature superconductivityPhysical Review B, 1988
- Top seeded solution growth of La4CuO4Journal of Crystal Growth, 1987
- Spectroscopic evidence for strongly correlated electronic states in La-Sr-Cu and Y-Ba-Cu oxidesPhysical Review B, 1987
- Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1970
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957