Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures
- 3 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (5) , 635-637
- https://doi.org/10.1063/1.121931
Abstract
A solid immersion lens (SIL) was applied to microscopic photoluminescence (PL) imaging at low temperatures. The spatial resolution corresponding to a numerical aperture of 1.0 was achieved and confirmed to be independent of temperature from 5 to 300 K. We performed PL imaging with the SIL for a GaAs quantum well and obtained stable PL images with high-spatial resolution at a wide temperature range from 5 to 200 K. From the temperature dependence of the PL images with high-spatial resolution, we can directly reveal the diffusion of photocarriers in the sample, which indicates the usefulness of the SIL technique.Keywords
This publication has 11 references indexed in Scilit:
- Application of Solid Immersion Lens to High-Resolution Photoluminescence Imaging of Patterned GaAs Quantum WellsJapanese Journal of Applied Physics, 1997
- Near-field optical data storageApplied Physics Letters, 1996
- MFM OBSERVATIONS OF NANOSCALE MARKS WRITTEN BY SIL NEAR FIELD RECORDINGJournal of the Magnetics Society of Japan, 1996
- Measurement of Micro Magnetic Moment by Means of Resonating Sample Magnetometry.Journal of the Magnetics Society of Japan, 1996
- Near-field optical data storage using a solid immersion lensApplied Physics Letters, 1994
- Near-Field Spectroscopy of the Quantum Constituents of a Luminescent SystemScience, 1994
- Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopyApplied Physics Letters, 1994
- High-numerical-aperture lens system for optical storageOptics Letters, 1993
- Breaking the Diffraction Barrier: Optical Microscopy on a Nanometric ScaleScience, 1991
- Solid immersion microscopeApplied Physics Letters, 1990