High Fidelity Direct‐Write Electron Beam Process for Trilayer Resist by Ion Shower Technology

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Abstract
In dissipating the charging effect during electron beam direct‐writing on trilayer resist, we developed a new process of irradiating the bottom layer resist with a H+ ion shower, prior to the interlayer coating. The sheet resistance of the bottom layer, 1013 Ω/□, was reduced to below 108 Ω/□ at a dosage of . By using this new trilayer resist process, the alignment error was decreased from 0.5 μm/3σ in a conventional trilayer resist process to less than 0.1 μ/3σ, which is equal to the error for the single‐layer resist on the Si substrate. Moreover, the dry etch resistance of the EB resist was improved by using H+ ion shower irradiation onto the top layer EB resist pattern. Thus the critical dimension loss during pattern transfer in trilayer resist was decreased from 0.2 μm in a conventional trilayer resist process to less than 0.1 μm.

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