Study of high frequency response of self-organisedstackedquantum dot lasers at room temperature

11 September 1997

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 33 (19) , 1641-1642
https://doi.org/10.1049/el:19971105

Abstract

The high frequency response of self-organised stacked InAs/GaAs quantum dot lasers grown by MOCVD is investigated through relaxation oscillation measurements at room temperature. The highest relaxation oscillation frequency for a 265 µm cavity laser at room temperature is 5.3 GHz, corresponding to a 3 dB cutoff frequency of 8.2 GHz. Good static properties, such as high intemal quantum efficiency (91%) and low transparency current density (40 A/cm²) at room temperature are also obtained.

Keywords

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