High-power single mode InGaAs/AlGaAs laser diodes at 910 nm

15 February 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (4) , 233-234
https://doi.org/10.1049/el:19900157

Abstract

Single mode laser diodes have been fabricated from pseudomorphic InGaAs/AlGaAs quantum well epitaxial material operating up to 350 mW CW. The laser output is a single transverse and longitudinal mode to 180 mW, while the spectral output is centred near 910nm.

Keywords

INGAAS-ALGAAS
SEMICONDUCTOR LASERS
SINGLE MODE
LONGITUDINAL MODE
LASER DIODES
PSEUDOMORPHIC MATERIAL
TRANSVERSE MODE
350 MW
910 NM
HIGH POWER TYPE
180 MW
QUANTUM WELL EPITAXIAL MATERIAL

This publication has 1 reference indexed in Scilit:

High Power Single Mode Laser Diodes
Published by SPIE-Intl Soc Optical Eng ,1989