Design considerations of power MOSFET for high frequency synchronous rectification
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 10 (3) , 388-395
- https://doi.org/10.1109/63.388006
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Soft-switched DC/DC converter with PWM controlPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-Frequency Quasi-Resonant and Multi-Resonant Converter TechnologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A low-voltage power MOSFET with a fast-recovery body diode for synchronous rectificationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Asymmetrical duty cycle permits zero switching loss in PWM circuits with no conduction loss penaltyIEEE Transactions on Industry Applications, 1993
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- BAMBI -- A Design Model for Power MOSFET'sIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- Numerical comparison of DMOS, VMOS, and UMOS power transistorsIEEE Transactions on Electron Devices, 1983