Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources
- 8 May 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (19) , 2522-2524
- https://doi.org/10.1063/1.113154
Abstract
Si diffusion and impurity‐induced layer intermixing from a buried impurity source have been studied by transmission electron microscopy and secondary ion mass spectroscopy of isolated, Si‐doped GaAs layers in an undoped Al0.4Ga0.6As/GaAs superlattice and by photoluminescence measurements on Si‐doped GaAs quantum wells with undoped Al0.4Ga0.6As barriers. In annealed samples, the Si profile suggests a Si diffusion process involving multiply ionized column III vacancies. The width of the resulting Si profile and the spatial extent and completeness of intermixing strongly depend on the initial Si concentration in the doped layer.Keywords
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