Hyperabrupt junctions in Au-Si Schottky diodes by ion implantation
- 9 August 1968
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 4 (16) , 335-337
- https://doi.org/10.1049/el:19680262
Abstract
The application of ion implantation to the fabrication of Au-Si Schottky diodes with highly nonlinear capacitance/voltage characteristics is described. The capacitance/voltage characteristic and the derived impurity profile are given for a typical diode. The forward current/voltage characteristics are described, and an estimate of Au-Si barrier height is made.Keywords
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