Control of mode behavior in semiconductor lasers
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (4) , 453-468
- https://doi.org/10.1109/jqe.1981.1071139
Abstract
No abstract availableThis publication has 43 references indexed in Scilit:
- Analysis of diode lasers with lateral spatial variations in thicknessApplied Physics Letters, 1980
- Guiding mechanisms controlled by impurity concentrations—(Al,Ga)As planar stripe lasers with deep Zn diffusionJournal of Applied Physics, 1980
- Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guideApplied Physics Letters, 1979
- Instabilities in output of injection lasersJournal of Applied Physics, 1979
- A condition of single longitudinal mode operation in injection lasers with index-guiding structureIEEE Journal of Quantum Electronics, 1979
- Study of intensity pulsations in proton-bombarded stripe-geometry double-heterostructure AlxGa1−xAs lasersJournal of Applied Physics, 1979
- Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operationIEEE Journal of Quantum Electronics, 1977
- Waveguiding in a stripe-geometry junction laserIEEE Journal of Quantum Electronics, 1977
- GaAs double heterostructure lasing behavior along the junction planeJournal of Applied Physics, 1975
- Steady-State Junction-Current Distributions in Thin Resistive Films on Semiconductor Junctions (Solutions of ▿2v = ±ev)Journal of Applied Physics, 1970