Monte Carlo surface scattering simulation in MOSFET structures

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Abstract
The Monte Carlo method has been applied to MOSFET devices with the gate lengths less than 1 µm. The electric field in the channel was obtained by an analytical approach. Since the classical situation is approached in the submicrometer gate device, the partial diffusive model is employed for surface scattering process. Transient phenomena such as velocity overshoot have been predicted with drain biases causing a large field gradient in the channel. Comparison of the results of the Monte Carlo simulation with those obtained by an analytical approach based on static mobility shows that the carrier transit time in the channel is shorter (as much as two times) than that predicted by the analytical approach for a 0.3 µm gate device.