New method of domain inversion in LiNbO 3 using thermal oxidation of Ti film
- 13 August 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (17) , 1594-1596
- https://doi.org/10.1049/el:19921015
Abstract
A new technique for fabricating domain inversion regions in –c face LiNbO3 by thermal oxidation of Ti is reported. This technique can minimise refractive index changes in such regions, thus it is suitable for quasiphase-matching (QPM) second harmonic generation (SHG). A prototype QPM waveguide SHG device is also demonstrated.Keywords
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