Dynamical screening and carrier mobility in GaAs-GaAlAs heterostructures
- 20 July 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (20) , L593-L597
- https://doi.org/10.1088/0022-3719/18/20/005
Abstract
The ohmic mobility due to acoustic and polar optical phonon scattering in a GaAs-GaAlAs heterojunction is calculated by the use of a formula in which temperature, wave vector and frequency-dependent screening are built in. It is shown that under RPA the enhancement of the polar optical phonon-induced resistivity due to dynamical effects almost compensates the reduction by static screening over the entire temperature region.Keywords
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