Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication
- 22 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (2) , 50-51
- https://doi.org/10.1049/el:19760041
Abstract
High-radiance GaAs l.e.d.s with 3 dB modulation bandwidths exceeding 500 MHz have been fabricated from p-n junction layers prepared with very high zinc acceptor doping levels. This development will permit the use of l.e.d.s in near-gigahertz or gigabit/s optical-fibre communication links.Keywords
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