Energy and electric field dependence of Si-SiO2 interface state parameters by optically activated admittance experiments
- 1 December 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6273-6278
- https://doi.org/10.1063/1.327614
Abstract
By means of a recently developed experimental technique, the dependence on the energy and electric field of Si‐SiO2 interface state capture cross sections has been measured for Al‐SiO2‐nSi structures with an oxide thickness ?800 Å. The capture cross section for holes,σp, has been observed to be several orders of magnitude larger than that for electron, σn, and further it has been observed to show a strong dependence on energy in the upper half of the silicon energy gap. This apparent dependence of σp on energy has been shown to arise primarily from a dependence on the electric field at the semiconductor surface. For the same electric field, interface states at different energies in the gap are observed to have very nearly the same magnitude of capture cross section.This publication has 12 references indexed in Scilit:
- Statistics of trap photoemission in MIS tunnel diodesSolid-State Electronics, 1979
- A determination of interface state energy during the capture of electrons and holes using DLTSIEEE Transactions on Electron Devices, 1979
- Determination of surface-state parameters from transfer-loss measurements in CCD’sJournal of Applied Physics, 1979
- Theory of bound states associated with-type inversion layers on siliconPhysical Review B, 1978
- Electronic states at the silicon-silicon dioxide interfaceProgress in Surface Science, 1977
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- Electronic structure of defect centers in SiO2Journal of Physics and Chemistry of Solids, 1971
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966