An all metalorganic‐hydride chemical vapor deposition process has been used to produce p‐type films on sapphire. Dimethylcadmium or di-ethylzinc have been combined with trimethylgallium and arsine to produce films with net acceptor concentrations as high as and , respectively. The doping concentrations are found to be an exponential function of growth temperature when other parameters remain fixed. The electrical properties of thick films are found to be equivalent to good quality bulk . Hole mobilities approximately 80–90% of the best thick‐film values have been obtained for acceptor concentrations ∼1019 cm−3 in thin (∼1 pm) films on sapphire and spinel.