Kohn anomalies and nonadiabaticity in doped carbon nanotubes

Abstract
The high-frequency Raman-active phonon modes of metallic single-walled carbon nanotubes (SWCNT) are thought to be characterized by Kohn anomalies (KAs) resulting from the combination of SWCNT intrinsic one-dimensional nature and a significant electron-phonon coupling (EPC). KAs are expected to be modified by the doping-induced tuning of the Fermi energy level ϵF, obtained through the intercalation of SWCNTs with alkali atoms or by the application of a gate potential. We present a density-functional theory (DFT) study of the phonon properties of a (9,9) metallic SWCNT as a function of electronic doping. For such study, we use, as in standard DFT calculations of vibrational properties, the Born-Oppenheimer (BO) approximation. We also develop an analytical model capable of reproducing and interpreting our DFT results. Both DFT calculations and this model predict, for increasing doping levels, a series of EPC-induced KAs in the vibrational mode parallel to the tube axis at the Γ point of the Brillouin zone, usually indicated in Raman spectroscopy as the G peak. Such KAs would arise each time a new conduction band is populated. However, we show that they are an artifact of the BO approximation. The inclusion of nonadiabatic effects dramatically affects the results, predicting KAs at Γ only when ϵF is close to a band crossing EX. For each band crossing, a double KA occurs for ϵF=EX±ω2, where ω is the phonon energy. In particular, for a 1.2nm metallic nanotube, we predict a KA to occur in the so-called G peak at a doping level of about NelC=±0.0015 atom (ϵF±0.1eV) and, possibly, close to the saturation doping level (NelC0.125), where an interlayer band crosses the π* nanotube bands. Furthermore, we predict that the Raman linewidth of the G peak significantly decreases for ϵFω2. Thus, our results provide a tool to determine experimentally the doping level from the value of the KA-induced frequency shift and from the linewidth of the G peak. Finally, we predict KAs to occur in phonons with finite momentum q not only in proximity of a band crossing but also each time a new band is populated. Such KAs should be observable in the double-resonant Raman peaks, such as the defect-activated D peak, and the second-order peaks 2D and 2G.