Control of magnetic-field effect on electroluminescence in Alq3-based organic light emitting diodes

Abstract
The magnetic-field effect on electroluminescence(EL) has been investigated for the tris-(8-hydroxyquinolino) aluminum ( Al q 3 ) -based organic light emitting diode. The EL intensity sharply increases up to 8% with increasing magnetic field to 500 Oe at room temperature. The magnetic fieldeffect on EL depends on the interface structure between a hole transporting and a light emitting layers, indicating the importance of the spin-state dynamics of the electron-hole pairs at the interface.