Substrate temperature measurement by absorption-edge spectroscopy during molecular beam epitaxy of narrow-band gap semiconductor films
- 1 March 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (2) , 329-336
- https://doi.org/10.1116/1.589316
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: