Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?
Preprint
- 15 May 2010
Abstract
We address recent experiments (Science 325, 1367 (2009)) reporting on highly efficient multiplication of electron-hole pairs in carbon nanotube photodiodes at photon energies near the carrier multiplication threshold (twice the quasi-particle band gap). This result is surprising in light of recent experimental and theoretical work on multiexciton generation in other confined materials, such as semiconducting nanocrystals. We propose a detailed mechanism based on carrier dynamics and impact excitation resulting in highly efficient multiplication of electron-hole pairs. We discuss the important time and energy scales of the problem and provide analysis of the role of temperature and the length of the diode.Keywords
All Related Versions
- Version 1, 2010-05-15, ArXiv
- Published version: Nano Letters, 10 (9), 3277.
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