A solution to the surface arsenic stoichiometric problem at the GaAs(001) growth surface in atomic layer expitaxy
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 82-83, 239-249
- https://doi.org/10.1016/0169-4332(94)90223-2
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Surface stoichiometry variation associated with GaAs (001) reconstruction transitionsJournal of Crystal Growth, 1991
- Comparative study of self-limiting growth of GaAs using different Ga-alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3GaJournal of Applied Physics, 1990
- Atomic layer epitaxyMaterials Science Reports, 1989
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxyApplied Physics Letters, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Mechanism of surface reaction in GaAs layer growthSurface Science, 1987
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971