Detection of extended interstitial chains in ion-damaged silicon

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Abstract
We have carried out a high‐resolution electron microscope lattice imaging study of As+ ion‐damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain‐type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di‐interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.