High-frequency power MOSFETs fabricated using selectively deposited LPCVD tungsten
- 3 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (16) , 1033-1034
- https://doi.org/10.1049/el:19890690
Abstract
A novel high-density, high-frequency power MOSFET structure fabricated using selectively deposited LPCVD tungsten on gate polysilicon and source contact regions is reported. The gate-to-source isolation was provided by anisotropically etched phosphosilicate glass (PSG) spacers. Using this technology we have successfully fabricated 30 V power DMOSFETs with excellent high-frequency switching performance in terms of low specific on-state resistance Rsp = 0.5 mΩcm2, low specific input capacitance Csf = 43nF/cm2, and high switching speed: ton and toff < 2 ns. These results represent the first successful demonstration of complex device structures fabricated using LPCVD tungsten derived process technology.Keywords
This publication has 1 reference indexed in Scilit:
- Special ApplicationsPublished by Elsevier ,1983