A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors
- 27 February 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (5) , 466-468
- https://doi.org/10.1049/el:19920294
Abstract
Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 ω. In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of –15.5 dBm for a bit error rate of 10-9 at a wavelength of 1.53 μm. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.Keywords
This publication has 1 reference indexed in Scilit:
- 2.5 and 10 Gb/s transmission experiments using a 137 photon/bit erbium-fiber preamplifier receiverIEEE Photonics Technology Letters, 1992