Analysis of a-As2Se3 transient photocurrents in the long-time regime

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Abstract
An earlier suggestion that the density of localized states should be resolvable from transient photocurrents in their long‐time regime, has been tested for a‐As2Se3. The field‐independent time dependences that are observed indicate that charge release out of traps is being seen, as predicted by the model. However, no realistic result for the density of deep states emerges; possibly because the model depends too heavily on a questionable thermalisation approximation. The results further suggest that the mobility edge lies ∼0.035 eV deeper in the band in evaporated a‐As2Se3 than it does in the bulk material.

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