Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap
- 8 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6) , 477-479
- https://doi.org/10.1063/1.99449
Abstract
We report the deposition and comprehensive evaluation of a hydrogenated, fluorinated amorphous silicon‐germanium alloy with an optical gap of 1.28 eV. This low‐gap alloy of the a‐Si, Ge system possesses a small midgap defect density (6.5×1016 cm−3), and useful electron (σph/σd=23) and hole (LD=0.13 μm) transport properties. The alloy was grown by radio‐frequency plasma‐enhanced decomposition of SiF4, GeF4, and H2 in a reactor built to ultrahigh‐vacuum specifications.Keywords
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