Properties of junction transistors
- 1 July 1955
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Audio
- Vol. AU-3 (4) , 107-124
- https://doi.org/10.1109/tau.1955.1165434
Abstract
The motion of electrons and holes is considered in relation to the PN junction and it in turn is considered in relation to the junction transistor. Electrical properties, equivalent circuit diagrams, and limiting conditions of operation of junction transistors are discussed. Special equations and features of the common base, common emitter, and common collector configurations are developed and tabulated.Keywords
This publication has 15 references indexed in Scilit:
- Segregation of Impurities During the Growth of Germanium and SiliconThe Journal of Physical Chemistry, 1953
- Properties of Silicon and GermaniumProceedings of the IRE, 1952
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952
- Junction Transistor Equivalent Circuits and Vacuum-Tube AnalogyProceedings of the IRE, 1952
- Single-Crystal GermaniumProceedings of the IRE, 1952
- Junction TransistorsPhysical Review B, 1951
- Some Circuit Properties and Applications of n-p-n TransistorsProceedings of the IRE, 1951
- Junctions Prepared by Impurity DiffusionPhysical Review B, 1950
- Some Circuit Aspects of the TransistorBell System Technical Journal, 1949
- Equivalent Circuits of Linear Active Four-Terminal Networks*Bell System Technical Journal, 1948