Field-induced tunnel diode in indium antimonide
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3999-4001
- https://doi.org/10.1063/1.322152
Abstract
Tunneling in a field‐induced diode in InSb operated at 77 °K is reported. The current‐voltage characteristics is controlled by the gate of an MIS structure. Tunneling is observed in both forward and reverse modes of operation. For SiO2 insulator thickness of 1000 Å, tunneling threshold voltages of 4 and 0.6 V are measured for the two operating regions, respectively.This publication has 5 references indexed in Scilit:
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- MOST's at cryogenic temperaturesSolid-State Electronics, 1968
- A high field triodeSolid-State Electronics, 1965
- The insulated gate tunnel junction triodeIEEE Transactions on Electron Devices, 1965
- Theory of TunnelingJournal of Applied Physics, 1961